FDS8949 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 29mΩ at VGS = 10V
* Max rDS(on) = 36mΩ at VGS = 4.5V
* Low gate charge
* High performance trench technology for extremely low rDS(on)
.

Application

where low in-line power loss and fast switching are required. Applications
* Inverter
* Power suppliers D2 D2 D.

Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suit.

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